www.siliconstandard.com 1 of 7 n-channel enhancement-mode power mosfet bv dss 200v r ds(on) 400mw i d 9a the SSM630GP achieves fast switching performance with low gate charge without a complex drive circuit. it is suitable for low voltage applications such as dc/dc pb-free; rohs - compliant to-220 product summary description notes: 1. pulse width must be limited to avoid exceeding the safe operating area. 2. pulse width <300us, duty cycle <2%. 3. starting tj = 25c, v dd =50v , l=4.5mh , r g =25w, i as =9a. converters and general load-switching circuits. t he ssm 630 gp is in to-2 20 for through-hole m ount ing where a small footprint is required on the board, and/or an g d s to-2 20 ( suffix p ) external heatsink is to be attached. these devices are manufactured with an advanced process, providing improved on-resistance and switching performance. a bsolute maximum ratings symbol parameter value units v ds v gs i d i dm p d w /c e as single p ulse a valanche e nerg y 3 t stg t j symbol parameter value units r q jc maximum t hermal r esistance , ju nction-case 1 .7 c /w r q ja maximum thermal resistance, junction-ambient 6 2 c /w drain- s ource v oltage 2 0 0 v gate- s ource v oltage 3 0 v continuous d rain c urrent, t c = 25c 9 a t c = 100c 5. 7 a pulsed d rain c urren t 1 3 6 a total p ower d issipation , t c = 25c 74 w -55 to 1 5 0 c operating j unction t emperature r ange -55 to 1 5 0 c linear d erating f actor 0. 5 9 2 40 m j t hermal characteristics storage t emperature r ange ssm 630 gp 8 / 2 2 /2006 re v.3.1 i ar avalanche current 9 a e ar repetitive avalanche energy 7 mj
electrical characteristics (at tj = 25c, unless otherwise specified) notes: 1.pulse width must be limited to avoid exceeding the maximum junction temperature of 150c. 2.pulse width <300us, duty cycle <2%. symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 200 - - v d bv dss / d t j breakdown voltage temperature coefficient reference to 25c, i d =1ma - 0.248 - v/c r ds(on) static drain-source on-resistance v gs =10v, i d =5a - - 400 mw v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =5a - 40 - s i dss drain-source leakage current v ds =200v, v gs =0v - - 10 ua v ds =160v ,v gs =0v, t j = 150c - - 25 ua i gss gate-source leakage current v gs =30v - - 100 na q g total gate charge 2 i d =9a - 25 - nc q gs gate-source charge v ds =160v - 3.6 - nc q gd gate-drain ("miller") charge v gs =10v - 14 - nc t d(on) turn-on delay time 2 v ds =100v - 8 - ns t r rise time i d =9a - 26 - ns t d(off) turn-off delay time r g =10w , v gs =10v - 34 - ns t f fall time r d =11w - 22 - ns c iss input capacitance v gs =0v - 515 - pf c oss output capacitance v ds =25v - 90 - pf c rss reverse transfer capacitance f=1.0mhz - 40 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward voltage 2 i s = 9a, v gs =0v - - 1.3 v i s continuous source current (body diode) v d =v g =0v , v s =1.3v - - 36 a i sm pulsed source current (body diode) 1 - - 9 a www.siliconstandard.com 2 of 7 ssm 630 gp 8 / 2 2 /2006 re v.3.1
www.siliconstandard.com 3 of 7 ssm 630 gp 8 / 2 2 /2006 re v.3.1 fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss vs. junction fig 4. normalized on-resistance temperature vs. junction temperature 0 0.5 1 1.5 2 2.5 3 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v g =10v i d =5a 0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 14 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c v g =7.0v v g =6.0v v g =5.0v v g =4.0v v g =8.0v v g =10v 0 2 4 6 8 10 02468101214 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =7.0v v g =6.0v v g =5.0v v g =4.0v v g =8.0v v g =10v 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c ) normalized bv dss (v)
www.siliconstandard.com 4 of 7 SSM630GP 8/2 2/2006 re v.3.1 fig 5. maximum drain current vs. fig 6. typical power dissipation case temperature fig 7. maximum safe operating area fig 8. effective transient thermal impedance 0 20 40 60 80 0 50 100 150 tc , case temperature ( o c) p d (w) 0 2 4 6 8 10 25 50 75 100 125 150 t c , case temperature ( o c) i d , drain current (a) 0 1 10 100 1 10 100 1000 v ds (v) i d (a) t c =25 o c single pulse 10us 100us 1ms 10ms 100ms 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse
www.siliconstandard.com 5 of 7 SSM630GP 8/2 2/2006 re v.3.1 fig 9. gate charge characteristics fig 10. typical capacitance characteristics fig 11. forward characteristic of fig 12. gate threshold voltage vs. reverse diode junction temperature 1 100 10000 1112131 v ds (v) c (pf) f =1.0mhz ciss coss crss 2 2.5 3 3.5 4 -50 0 50 100 150 t j junction temperayure ( o c) v gs(th) (v) 0.01 0.10 1.00 10.00 100.00 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v sd (v) i s (a) t j =25 o c t j =150 o c 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =9a v ds =80v v ds =120v v ds =160v
www.siliconstandard.com 6 of 7 SSM630GP 8/2 2/2006 re v.3.1 fig 13. switching time circuit fig 14. switching time waveform fig 15. gate charge circuit fig 16. gate charge waveform t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0.5x rated v ds to the oscilloscope - + 10 v d g s v ds v gs r g r d 0.8 x rated v ds to the oscilloscope - + d g s v ds v gs i d i g 1~ 3 m a
www.siliconstandard.com 7 of 7 physical dimensions - to-220 part marking - to-220 packing: moisture sensitivity level msl3 1000pcs in tubes packed inside a 630gp ywwsss date/lot code: y = last digit of the year ww = work week (01 -> 52) sss = lot code sequence millimeters min nom max a 4.25 4.48 4.70 b 0.65 0.80 0.90 b1 1.15 1.38 1.60 c 0.40 0.50 0.60 c1 1.00 1.20 1.40 e 9.70 10.00 10.40 e ---- 2.54 ---- l 12.70 13.60 14.50 l1 2.60 2.80 3.00 l2 1.00 1.40 1.80 l3 2.6 3.10 3.6 l4 14.70 15.50 16 l5 6.30 6.50 6.70 f 3.50 3.60 3.70 d 8.40 8.90 9.40 1. all dimensions are in m illimeters. 2. dimensions do not include mold protrusions. symbols e b b1 e d l3 l4 l1 l2 a c1 c l f l5 ssm 630 gp 8 / 2 2 /2006 re v.3.1 part number: 630gp = SSM630GP moisture barrier bag (mbb). in formation furnished by silicon standard corporation is believed to be accurate and reliable. however, silicon standard corporation makes no guarantee or warranty, expre ss or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. silicon standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. no license is granted, whether expressly or by im plication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of silicon standard corporation or any third parties.
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